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          Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier Diode RSX501L-20 ?Applications ?Dimensions (Unit : mm) ?Land size figure (Unit : mm) General rectification ?Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. ?Construction Silicon epitaxial planar ?Structure ?Taping specifications (Unit : mm) ?Absolute maximum ratings (Ta=25°C) Parameter LimitsSymbol Unit Reverse voltage (repetitive peak) 25VRM V Reverse voltage (DC) 20VR V Average rectified forward current 5Io A IFSM A Junction temperature 125Tj °C Tstg °C?40 to ?125 ?Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 0.39 V IF=3.0A Reverse current IR - - 500 μA VR=20V Forward current surge peak (60Hz?1cyc)(*1) 70 Storage temperature (*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave Parameter 0.1±0.02 0.1 2.6±0.2 2.0±0.2 5.0±0.3 1.2±0.3 4.5±0.2 1.5±0.2 PMDS 2.0 4.2 2.0 4.0±0.1 2.9±0.1 4.0±0.1 2.0±0.05 φ1.55±0.05 5.5±0.05 1.75±0.1 12±0.2 φ1.55 9.5±0.1 0.3 5.3±0.1 0.05 2.8MAX ROHM : PMDS JEDEC : SOD-106 ① Manufacture Date ② ① ② 7 5 1/3 2011.05 - Rev.D |